標題: Characteristics of a-plane GaN with the SiNx insertion layer grown by metal-organic chemical vapor deposition
作者: Ko, T. S.
Wang, T. C.
Huang, H. M.
Chen, J. R.
Chen, H. G.
Chu, C. P.
Lu, T. C.
Kuo, H. C.
Wang, S. C.
光電工程學系
光電工程研究所
Department of Photonics
Institute of EO Enginerring
關鍵字: Crystallities;Metalorganic chemical vapor deposition;Nitrides;Semiconducting III-V materials
公開日期: 15-Nov-2008
摘要: We utilized in-situ-grown SiNx insertion layers to mitigate part of dislocations stretching in nonpolar a-plane GaN films using metal-organic chemical vapor deposition. Both X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements revealed that better crystal quality and smoother surface could be obtained when the in-situ SiNx layer was inserted closer to the r-plane sapphire substrate and indicated that the in-situ SiNx insertion layer could suppress dislocations caused by lattice mismatch between the sapphire and epitaxial layers. In addition, photoluminescence and cathodoluminescence measurements confirmed the effect of the in-situ SiNx insertion layer on the optical properties of the improved a-plane GaN thin film, which is consistent with the XRD and AFM analyses and suggested reduction in the density of nonradiative centers. (C) 2008 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2008.07.058
http://hdl.handle.net/11536/149714
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2008.07.058
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 310
起始頁: 4972
結束頁: 4975
Appears in Collections:Articles