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dc.contributor.authorShen, Yu-Shuen_US
dc.contributor.authorChiou, Bi-Shiouen_US
dc.contributor.authorHo, Chia-Chengen_US
dc.date.accessioned2019-04-02T06:00:59Z-
dc.date.available2019-04-02T06:00:59Z-
dc.date.issued2008-12-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2008.06.034en_US
dc.identifier.urihttp://hdl.handle.net/11536/149717-
dc.description.abstractIn this study, a novel material CaCu3Ti4O12 (CCTO), for resistance random access memory application, was prepared by sol-gel method and annealed at various temperatures. The crystallinity and microstructure of CCTO film, improve as annealing temperature increases. The CCTO films annealed at 800 degrees C and above endure more switching cycles (> 1000) and exhibit a small degradation of the resistance ratio between the high resistance state and the low resistance state than those annealed at 700 degrees C do. The correlation between resistance switching behaviors and film microstructure is discussed. (C) 2008 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectCaCu3Ti4O12 (CCTO)en_US
dc.subjectSol-gelen_US
dc.subjectResistance random access memoryen_US
dc.titleEffects of annealing temperature on the resistance switching behavior of CaCu3Ti4O12 filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.tsf.2008.06.034en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume517en_US
dc.citation.spage1209en_US
dc.citation.epage1213en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentInnovative Packaging Research Centerzh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentInnovative Packaging Research Centeren_US
dc.identifier.wosnumberWOS:000262053800041en_US
dc.citation.woscount20en_US
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