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dc.contributor.authorChen, Y. C.en_US
dc.contributor.authorLin, Q. R.en_US
dc.contributor.authorChu, Y. H.en_US
dc.date.accessioned2019-04-02T05:59:39Z-
dc.date.available2019-04-02T05:59:39Z-
dc.date.issued2009-03-23en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3109779en_US
dc.identifier.urihttp://hdl.handle.net/11536/149761-
dc.description.abstractWe present a quantitative study of 180 degrees domain wall motion in epitaxial BiFeO3 (111) films, which can be treated as a nearly ideal single-domain environment. The domains were dynamically written by applying voltage pulses and examined by the piezoresponse force microscope technique. A transition of domain growth behaviors from the activated type to the nonactivated type was observed when increasing the pulse voltages. The obtained activation field was close to the ideally thermodynamic switching field of BiFeO3. The asymmetry of activated fields showed the preference of the downward polarization in the BiFeO3/SrRuO3 films.en_US
dc.language.isoen_USen_US
dc.subjectantiferromagnetic materialsen_US
dc.subjectatomic force microscopyen_US
dc.subjectbismuth compoundsen_US
dc.subjectelectric domain wallsen_US
dc.subjectferroelectric thin filmsen_US
dc.subjectmagnetic domain wallsen_US
dc.subjectmultiferroicsen_US
dc.subjectthermodynamic propertiesen_US
dc.titleDomain growth dynamics in single-domain-like BiFeO3 thin filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3109779en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume94en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000264633500049en_US
dc.citation.woscount21en_US
Appears in Collections:Articles