Title: Domain growth dynamics in single-domain-like BiFeO3 thin films
Authors: Chen, Y. C.
Lin, Q. R.
Chu, Y. H.
材料科學與工程學系
Department of Materials Science and Engineering
Keywords: antiferromagnetic materials;atomic force microscopy;bismuth compounds;electric domain walls;ferroelectric thin films;magnetic domain walls;multiferroics;thermodynamic properties
Issue Date: 23-Mar-2009
Abstract: We present a quantitative study of 180 degrees domain wall motion in epitaxial BiFeO3 (111) films, which can be treated as a nearly ideal single-domain environment. The domains were dynamically written by applying voltage pulses and examined by the piezoresponse force microscope technique. A transition of domain growth behaviors from the activated type to the nonactivated type was observed when increasing the pulse voltages. The obtained activation field was close to the ideally thermodynamic switching field of BiFeO3. The asymmetry of activated fields showed the preference of the downward polarization in the BiFeO3/SrRuO3 films.
URI: http://dx.doi.org/10.1063/1.3109779
http://hdl.handle.net/11536/149761
ISSN: 0003-6951
DOI: 10.1063/1.3109779
Journal: APPLIED PHYSICS LETTERS
Volume: 94
Appears in Collections:Articles