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dc.contributor.authorShen, Yu-Shuen_US
dc.contributor.authorHo, Chia-Chengen_US
dc.contributor.authorChiou, Bi-Shiouen_US
dc.date.accessioned2019-04-02T05:59:40Z-
dc.date.available2019-04-02T05:59:40Z-
dc.date.issued2009-01-01en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.3111882en_US
dc.identifier.urihttp://hdl.handle.net/11536/149776-
dc.description.abstractCaCu3Ti4O12 (CCTO), for resistance random access memory (RRAM) application, was prepared by the sol-gel method. Our preliminary study indicates that CCTO possesses the resistive switching behaviors of RRAM. In this work, the resistance switching characteristics of CCTO films were investigated. The impedance spectroscopy was applied to CCTO films during the switching cycle. Based on the results observed by impedance spectroscopy, the conduction mechanisms of the CCTO RRAMs at the original, ON, and OFF states were explored.en_US
dc.language.isoen_USen_US
dc.subjectcalcium compoundsen_US
dc.subjectcircuit switchingen_US
dc.subjectcopper compoundsen_US
dc.subjectelectric impedanceen_US
dc.subjectrandom-access storageen_US
dc.subjectsol-gel processingen_US
dc.subjectthin film devicesen_US
dc.titleImpedance Spectroscopy of CaCu3Ti4O12 Films Showing Resistive Switchingen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.3111882en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume156en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentInnovative Packaging Research Centerzh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentInnovative Packaging Research Centeren_US
dc.identifier.wosnumberWOS:000265737600051en_US
dc.citation.woscount2en_US
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