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dc.contributor.authorHo, Yen-Tengen_US
dc.contributor.authorWang, Wei-Linen_US
dc.contributor.authorPeng, Chun-Yenen_US
dc.contributor.authorChen, Wei-Chunen_US
dc.contributor.authorLiang, Mei-Huien_US
dc.contributor.authorTian, Jr. -Shengen_US
dc.contributor.authorChang, Lien_US
dc.date.accessioned2019-04-02T06:00:14Z-
dc.date.available2019-04-02T06:00:14Z-
dc.date.issued2009-05-01en_US
dc.identifier.issn1862-6254en_US
dc.identifier.urihttp://dx.doi.org/10.1002/pssr.200903009en_US
dc.identifier.urihttp://hdl.handle.net/11536/149787-
dc.description.abstractHeteroepitaxial growth of non-polar in-plane (10 (1) over bar0) ZnO has been demonstrated on (112) LaAlO3 single crystal substrates using the pulsed laser deposition method. X-ray diffraction, reflection high energy electron diffraction, and cross-sectional transmission electron microscopy with selected-area diffraction, have been used to characterize the structural properties of deposited ZnO films. The epitaxial relationship between ZnO and LAO is shown to be (10 (1) over bar0)(ZnO) parallel to (112)(LAO), (11 (2) over bar0)(ZnO) parallel to ((1) over bar(1) over bar1)(LAO), and [0001](ZnO) parallel to [(1) over bar 10](LAO). (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheimen_US
dc.language.isoen_USen_US
dc.titleEpitaxy of m-plane ZnO on (112) LaAlO3 substrateen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/pssr.200903009en_US
dc.identifier.journalPHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERSen_US
dc.citation.volume3en_US
dc.citation.spage109en_US
dc.citation.epage111en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000266471700013en_US
dc.citation.woscount16en_US
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