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dc.contributor.authorPintilie, L.en_US
dc.contributor.authorDragoi, C.en_US
dc.contributor.authorChu, Y. H.en_US
dc.contributor.authorMartin, L. W.en_US
dc.contributor.authorRamesh, R.en_US
dc.contributor.authorAlexe, M.en_US
dc.date.accessioned2019-04-02T06:00:14Z-
dc.date.available2019-04-02T06:00:14Z-
dc.date.issued2009-06-08en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3152784en_US
dc.identifier.urihttp://hdl.handle.net/11536/149792-
dc.description.abstractThe leakage current in epitaxial BiFeO3 capacitors with bottom SrRuO3 and top Pt electrodes, grown by pulsed laser deposition on SrTiO3 (100), SrTiO3 (110), and SrTiO3 (111) substrates, is investigated by current-voltage (I-V) measurements in the 100-300 K temperature range. It is found that the leakage current is interface-limited and strongly dependent on the orientation of the substrate. The potential barriers at the electrode interfaces are estimated to about 0.6, 0.77, and 0.93 eV for the (100), (110), and (111) orientations, respectively.en_US
dc.language.isoen_USen_US
dc.subjectbismuth compoundsen_US
dc.subjectelectrodesen_US
dc.subjectferroelectric capacitorsen_US
dc.subjectferroelectric thin filmsen_US
dc.subjectleakage currentsen_US
dc.subjectpermittivityen_US
dc.subjectplatinumen_US
dc.subjectpulsed laser depositionen_US
dc.subjectstrontium compoundsen_US
dc.titleOrientation-dependent potential barriers in case of epitaxial Pt-BiFeO3-SrRuO3 capacitorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3152784en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume94en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000266977100058en_US
dc.citation.woscount51en_US
Appears in Collections:Articles