| 標題: | High-Density and Low-Leakage-Current MIM Capacitor Using Stacked TiO2/ZrO2 Insulators |
| 作者: | Lin, S. H. Chiang, K. C. Chin, Albert Yeh, F. S. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| 關鍵字: | high kappa;metal-insulator-metal (MIM);TiO2;ZrO2 |
| 公開日期: | 1-七月-2009 |
| 摘要: | We have fabricated high-kappa Ni/TiO2/ZrO2/TiN metal-insulator-metal (MIM) capacitors. A low leakage current of 8 x 10(-8) A/cm(2) at 125 degrees C was obtained with a high 38-fF/mu m(2) capacitance density and better than the ZrO2 MIM capacitors. The excellent device performance is due to the lower electric field in 9.5-nm-thick TiO2/ZrO2 devices to decrease the leakage current and to a higher kappa value of 58 for TiO2 as compared with that of ZrO2 to preserve the high capacitance density. |
| URI: | http://dx.doi.org/10.1109/LED.2009.2022775 http://hdl.handle.net/11536/149799 |
| ISSN: | 0741-3106 |
| DOI: | 10.1109/LED.2009.2022775 |
| 期刊: | IEEE ELECTRON DEVICE LETTERS |
| Volume: | 30 |
| 起始頁: | 715 |
| 結束頁: | 717 |
| 顯示於類別： | 期刊論文 |
- High-Density and Low-Leakage-Current MIM Capacitor Using Stacked TiO(2)/ZrO(2) Insulators / Lin, S. H.;Chiang, K. C.;Chin, Albert;Yeh, F. S.
- High-Performance Metal-Insulator-Metal Capacitors With HfTiO/Y2O3 Stacked Dielectric / Tsui, Bing-Yue;Hsu, Hsiao-Hsuan;Cheng, Chun-Hu
- Improved Capacitance Density and Reliability of High-k Ni/ZrO2/TiN MIM Capacitors Using Laser-Annealing Technique / Tsai, C. Y.;Chiang, K. C.;Lin, S. H.;Hsu, K. C.;Chi, C. C.
- High Capacitance Density and Thermal Leakage Improvement by Using High-kappa Al2O3-Doped SrTiO3 MIM Capacitors / Huang, C. C.;Cheng, C. H.;Lin, C. W.;Chang, L. M.
- High Capacitance Density and Thermal Leakage Improvement by Using High-kappa Al(2)O(3)-Doped SrTiO(3) MIM Capacitors / Huang, C. C.;Cheng, C. H.;Lin, C. W.;Chang, L. M.
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