标题: | High-Density and Low-Leakage-Current MIM Capacitor Using Stacked TiO2/ZrO2 Insulators |
作者: | Lin, S. H. Chiang, K. C. Chin, Albert Yeh, F. S. 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
关键字: | high kappa;metal-insulator-metal (MIM);TiO2;ZrO2 |
公开日期: | 1-七月-2009 |
摘要: | We have fabricated high-kappa Ni/TiO2/ZrO2/TiN metal-insulator-metal (MIM) capacitors. A low leakage current of 8 x 10(-8) A/cm(2) at 125 degrees C was obtained with a high 38-fF/mu m(2) capacitance density and better than the ZrO2 MIM capacitors. The excellent device performance is due to the lower electric field in 9.5-nm-thick TiO2/ZrO2 devices to decrease the leakage current and to a higher kappa value of 58 for TiO2 as compared with that of ZrO2 to preserve the high capacitance density. |
URI: | http://dx.doi.org/10.1109/LED.2009.2022775 http://hdl.handle.net/11536/149799 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2009.2022775 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 30 |
起始页: | 715 |
结束页: | 717 |
显示于类别: | Articles |