Title: | Diode-pumped passively mode-locked 1342 nm Nd:YVO4 laser with an AlGaInAs quantum-well saturable absorber |
Authors: | Huang, S. C. Cheng, H. L. Chen, Yi-Fan Su, K. W. Chen, Y. F. Huang, K. F. 電子物理學系 Department of Electrophysics |
Issue Date: | 1-Aug-2009 |
Abstract: | We demonstrate what we believe to be the first use of AlGaInAs quantum wells (QWs) as a saturable absorber for a diode-pumped passively mode locked Nd:YVO4 laser at 1342 nm. The QWs are grown on a Fedoped InP substrate that is transparent at lasing wavelength. At an incident pump power of 13.5 W an average output power of 1.05 W with a continuous mode-locked pulse duration of 26.4 ps at a repetition rate of 152 MHz was generated. (C) 2009 Optical Society of America |
URI: | http://dx.doi.org/10.1364/OL.34.002348 http://hdl.handle.net/11536/149821 |
ISSN: | 0146-9592 |
DOI: | 10.1364/OL.34.002348 |
Journal: | OPTICS LETTERS |
Volume: | 34 |
Begin Page: | 2348 |
End Page: | 2350 |
Appears in Collections: | Articles |