Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chang, Chia-Yuan | en_US |
dc.contributor.author | Hsu, Heng-Tung | en_US |
dc.contributor.author | Chang, Edward Yi | en_US |
dc.contributor.author | Trinh, Hai-Dang | en_US |
dc.contributor.author | Miyamoto, Yasuyuki | en_US |
dc.date.accessioned | 2019-04-02T05:58:44Z | - |
dc.date.available | 2019-04-02T05:58:44Z | - |
dc.date.issued | 2009-01-01 | en_US |
dc.identifier.issn | 1099-0062 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1149/1.3241014 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/149844 | - |
dc.description.abstract | N-type metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) devices with an InAs-channel using atomiclayer-deposited (ALD) Al2O3 as a gate dielectric have been fabricated and characterized. The device performances of a set of scaled transistors with and without high-k gate dielectric Al2O3 have been compared to determine the optimum device structure for low power and high speed applications. The measurement results revealed that the high performance InAs-channel MOS-HEMTs with the ALD Al2O3 gate dielectric can be achieved if the structure is designed properly. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3241014] All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.title | InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1149/1.3241014 | en_US |
dc.identifier.journal | ELECTROCHEMICAL AND SOLID STATE LETTERS | en_US |
dc.citation.volume | 12 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000270915300027 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Articles |