標題: InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al(2)O(3) Gate Dielectric
作者: Chang, Chia-Yuan
Hsu, Heng-Tung
Chang, Edward Yi
Trinh, Hai-Dang
Miyamoto, Yasuyuki
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-Jan-2009
摘要: N-type metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) devices with an InAs-channel using atomiclayer-deposited (ALD) Al(2)O(3) as a gate dielectric have been fabricated and characterized. The device performances of a set of scaled transistors with and without high-k gate dielectric Al(2)O(3) have been compared to determine the optimum device structure for low power and high speed applications. The measurement results revealed that the high performance InAs-channel MOS-HEMTs with the ALD Al(2)O(3) gate dielectric can be achieved if the structure is designed properly. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3241014] All rights reserved.
URI: http://dx.doi.org/10.1149/1.3241014
http://hdl.handle.net/11536/8004
ISSN: 1099-0062
DOI: 10.1149/1.3241014
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 12
Issue: 12
起始頁: H456
結束頁: H459
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