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dc.contributor.authorLin, Huang-Kaien_US
dc.contributor.authorCheng, Hsin-Anen_US
dc.contributor.authorLee, Chi-Youngen_US
dc.contributor.authorChiu, Hsin-Tienen_US
dc.date.accessioned2019-04-02T05:58:48Z-
dc.date.available2019-04-02T05:58:48Z-
dc.date.issued2009-11-24en_US
dc.identifier.issn0897-4756en_US
dc.identifier.urihttp://dx.doi.org/10.1021/cm901726sen_US
dc.identifier.urihttp://hdl.handle.net/11536/149853-
dc.description.abstractA C54-TiSi2 film was grown on a Si substrate at 1073 K by low pressure chemical vapor deposition (LPCVD) employing titanium subchlorides TiClx((g)), generated by reacting between TiCl4(g) and Ti-(s) at 1173 K, as the Ti source. Growth of titanium silicide (TiSi) nanowires (NWs; diameter 30-80 rim, length several micrometers) on a C54-TiSi2 film was observed. Growth direction of the NWs was determined to be along the [010] axis. An amorphous titanium silicide interlayer was observed between the NWs and the C54-TiSi2 film. This interlayer, probably existing as a quasi-liquid thin film during the growth, appears to be the key factor to assist the NW development. Field emission properties, turn-on field E-o and field enhancement factor beta, of the vertically grown TiSi NWs were determined to be 5.25 V mu m(-1) and 876, respectively.en_US
dc.language.isoen_USen_US
dc.titleChemical Vapor Deposition of TiSi Nanowires on C54 TiSi2 Thin Film: An Amorphous Titanium Silicide Interlayer Assisted Nanowire Growthen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/cm901726sen_US
dc.identifier.journalCHEMISTRY OF MATERIALSen_US
dc.citation.volume21en_US
dc.citation.spage5388en_US
dc.citation.epage5396en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:000271756400006en_US
dc.citation.woscount16en_US
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