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dc.contributor.authorWu, Yun-Chien_US
dc.contributor.authorChang, Edward Yien_US
dc.contributor.authorLin, Yueh-Chinen_US
dc.contributor.authorKei, Chi-Chungen_US
dc.contributor.authorHudait, Mantu K.en_US
dc.contributor.authorRadosavljevic, Markoen_US
dc.contributor.authorWong, Yuen-Yeeen_US
dc.contributor.authorChang, Chia-Taen_US
dc.contributor.authorHuang, Jui-Chienen_US
dc.contributor.authorTang, Shih-Hsuanen_US
dc.date.accessioned2019-04-02T05:58:51Z-
dc.date.available2019-04-02T05:58:51Z-
dc.date.issued2010-01-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.sse.2009.09.033en_US
dc.identifier.urihttp://hdl.handle.net/11536/149866-
dc.description.abstractInxGa1-xAs III-V compound semiconductor metal-oxide-semiconductor field-effect transistors have become a popular topic recently due to the higher drift velocity, and lower effective mass of the InxGa1-xAs materials. The impact of In content on the accumulation and inversion behaviors of the Al2O3/InxGa1-xAs capacitors is investigated in this study. For the various InxGa1-xAs materials studied, the Al2O3/InAs MOS system showed the strongest inversion phenomena due to the shorter response time of minority carrier of InAs compared to other InxGa1-xAs materials. Also, very low gate leakage current in the 10(-8) A/cm(2) range was observed for these capacitors. These results demonstrate that Al2O3/InAs MOS system with strong inversion phenomena and low leakage gate current is potential candidate for future high-performance low power logic MOSFET applications. (C) 2009 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectInGaAsen_US
dc.subjectInAsen_US
dc.subjectMOSen_US
dc.subjectAl2O3en_US
dc.subjectALDen_US
dc.subjectCapacitoren_US
dc.titleStudy of the inversion behaviors of Al2O3/InxGa1-xAs metal-oxide-semiconductor capacitors with different In contentsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.sse.2009.09.033en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume54en_US
dc.citation.spage37en_US
dc.citation.epage41en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000272970300008en_US
dc.citation.woscount14en_US
Appears in Collections:Articles