Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wen, Hua-Chiang | en_US |
dc.contributor.author | Yang, Chu-Shou | en_US |
dc.contributor.author | Chou, Wu-Ching | en_US |
dc.date.accessioned | 2019-04-02T05:58:54Z | - |
dc.date.available | 2019-04-02T05:58:54Z | - |
dc.date.issued | 2010-01-15 | en_US |
dc.identifier.issn | 0169-4332 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.apsusc.2009.09.059 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/149879 | - |
dc.description.abstract | We present a study of the nanoindentation behavior of Zn1-xCdxSe epilayers grown using molecular beam epitaxy; the surface roughness, microstructure, and crystallinity were analyzed using atomic force microscopy, cross-sectional transmission electron microscopy, and X-ray diffraction; the hardness H and elastic modulus E were studied using nanoindentation techniques. We found that these highly crystalline materials possessed no stacking faults or twins in their microstructures. We observed a very marked increase in the value of H and a significant decrease in the value of E upon increasing the concentration of Cd, presumably because of an increase in the stiffness of the CdSe bond relative to that of the ZnSe bond. We observed a corresponding shrinkage of the contact-induced damage area for those films having a small grain size and a higher value of H. It appears that resistance against contact-induced damage requires a higher Cd concentration. (C) 2009 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Nanoindentation | en_US |
dc.subject | ZnCdSe | en_US |
dc.subject | XTEM | en_US |
dc.subject | Hardness | en_US |
dc.title | Effect of microstructure on the nanomechanical properties of Zn1-xCdxSe alloys | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.apsusc.2009.09.059 | en_US |
dc.identifier.journal | APPLIED SURFACE SCIENCE | en_US |
dc.citation.volume | 256 | en_US |
dc.citation.spage | 2128 | en_US |
dc.citation.epage | 2131 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000273669300029 | en_US |
dc.citation.woscount | 17 | en_US |
Appears in Collections: | Articles |