完整後設資料紀錄
DC 欄位語言
dc.contributor.authorSung, Chao-Fengen_US
dc.contributor.authorKekuda, Dhananjayen_US
dc.contributor.authorChu, Li Fenen_US
dc.contributor.authorChen, Fang-Chungen_US
dc.contributor.authorCheng, Shiau-Shinen_US
dc.contributor.authorLee, Yuh-Zhengen_US
dc.contributor.authorWu, Meng-Chyien_US
dc.contributor.authorChu, Chih-Weien_US
dc.date.accessioned2019-04-02T05:58:55Z-
dc.date.available2019-04-02T05:58:55Z-
dc.date.issued2010-01-01en_US
dc.identifier.issn1566-1199en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.orgel.2009.09.020en_US
dc.identifier.urihttp://hdl.handle.net/11536/149890-
dc.description.abstractIn this article, low temperature processed, reactively evaporated titanium oxide layers were utilized as gate dielectrics for achieving low voltage driven transistors and complementary inverters. The surface of the gate dielectric was modified by an ultra thin (similar to 30 nm) fluoropolymer Cytop (R) layer which partially helped to reduce the leakage in the dielectric films and also enhanced the organic transistor performance. The current investigation demonstrates the ability of these high capacitance bi-layer dielectrics (k similar to 20). The combined p-type and n-type field-effect transistors show similar saturation mobility similar to 0.3 cm(2)/Vs to achieve low voltage driven complementary circuits with output gain of 22. Low temperature processing of these dielectric layers make them easily integrated. (C) 2009 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectOrganicen_US
dc.subjectTitanium oxideen_US
dc.subjectDielectricsen_US
dc.subjectThin-film transistorsen_US
dc.titleHybrid TiOx/fluoropolymer bi-layer dielectrics for low-voltage complementary invertersen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.orgel.2009.09.020en_US
dc.identifier.journalORGANIC ELECTRONICSen_US
dc.citation.volume11en_US
dc.citation.spage154en_US
dc.citation.epage158en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000274283700024en_US
dc.citation.woscount5en_US
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