標題: | Al2O3/Ga2O3(Gd2O3) passivation on In0.20Ga0.80As/GaAs-structural intactness with high-temperature annealing |
作者: | Lee, Y. J. Lee, C. H. Tung, L. T. Chiang, T. H. Lai, T. Y. Kwo, J. Hsu, C-H Hong, M. 光電工程學系 光電工程研究所 Department of Photonics Institute of EO Enginerring |
公開日期: | 7-四月-2010 |
摘要: | Molecular beam epitaxy grown Al2O3/Ga2O3(Gd2O3)/In0.20Ga0.80As/GaAs has been rapidly thermal annealed to 850 degrees C in N-2. The hetero-structure remained intact, with the In0.20Ga0.80As/GaAs interface being free of misfit dislocation and In0.20Ga0.80As strained, as observed by high-resolution transmission electron microscopy and high-resolution x-ray diffraction using synchrotron radiation. Excellent capacitance-voltage characteristics as well as low electrical leakages were obtained. These structural and electrical results demonstrate that employing Ga2O3(Gd2O3) as a dielectric with an in situ Al2O3 capping layer efficiently protects strained InGaAs layers from relaxing and volatilizing during rapid thermal annealing to 850 degrees C, important for fabricating inversion-channel InGaAs metal-oxide-semiconductor field-effect-transistors, a candidate for beyond the 16 nm node complementary MOS technology. |
URI: | http://dx.doi.org/10.1088/0022-3727/43/13/135101 http://hdl.handle.net/11536/149906 |
ISSN: | 0022-3727 |
DOI: | 10.1088/0022-3727/43/13/135101 |
期刊: | JOURNAL OF PHYSICS D-APPLIED PHYSICS |
Volume: | 43 |
顯示於類別: | 期刊論文 |