Efficiency Droop Reduction in InGaN/GaN Light-emitting Diodes by Graded-thickness Multiple Quantum Wells

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DC Field	Value	Language
dc.contributor.author	Wang, C. H.	en_US
dc.contributor.author	Chang, W. T.	en_US
dc.contributor.author	Chang, S. P.	en_US
dc.contributor.author	Li, J. C.	en_US
dc.contributor.author	Kuo, H. C.	en_US
dc.contributor.author	Lu, T. C.	en_US
dc.contributor.author	Wang, S. C.	en_US
dc.date.accessioned	2014-12-08T15:21:05Z	-
dc.date.available	2014-12-08T15:21:05Z	-
dc.date.issued	2011	en_US
dc.identifier.isbn	978-1-55752-910-7	en_US
dc.identifier.uri	http://hdl.handle.net/11536/14993	-
dc.description.abstract	InGaN/GaN LED with graded-thickness MQWs has superior hole and radiative recombination distribution by simulation modeling, and electroluminescence spectrum reveals additional emission from the narrower wells. Output power and efficiency droop behavior are both improved. (C) 2010 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	Efficiency Droop Reduction in InGaN/GaN Light-emitting Diodes by Graded-thickness Multiple Quantum Wells	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000295612402159	-
Appears in Collections:	Conferences Paper