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dc.contributor.authorCheng, C. H.en_US
dc.contributor.authorHsu, H. H.en_US
dc.contributor.authorChen, P. C.en_US
dc.contributor.authorLiou, B. H.en_US
dc.contributor.authorChin, Alberten_US
dc.contributor.authorYeh, F. S.en_US
dc.date.accessioned2019-04-02T05:58:25Z-
dc.date.available2019-04-02T05:58:25Z-
dc.date.issued2010-06-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.sse.2010.01.024en_US
dc.identifier.urihttp://hdl.handle.net/11536/149953-
dc.description.abstractIn this work, we studied a TiO2 mixed LaAlO3 dielectric (TLAO) for metal-insulator-metal (MIM) capacitors. The resulting capacitor characteristics showed a high capacitance density of 23.2 fF/mu m(2) and a low leakage current of 7.5 x 10(-7) A/cm(2) at -1 V. Comparing to the control samples of TiLaO (ILO), TLAO dielectrics with Al2O3 doping showed lower leakage current, smaller voltage nonlinearity and better time-dependent dielectric breakdown (TDDB) performance. Therefore, the TiO2-based dielectrics with the introduction of Al2O3 might be favorable for the improved engineering of MIM capacitors. (C) 2010 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectMetal-insulator-metal capacitoren_US
dc.subjectLaAlO3en_US
dc.subjectAl2O3en_US
dc.titleHigher-kappa titanium dioxide incorporating LaAlO3 as dielectrics for MIM capacitorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.sse.2010.01.024en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume54en_US
dc.citation.spage646en_US
dc.citation.epage649en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000277500300007en_US
dc.citation.woscount3en_US
Appears in Collections:Articles


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