Higher-kappa titanium dioxide incorporating LaAlO(3) as dielectrics for MIM capacitors

Abstract

In this work, we studied a TiO(2) mixed LaAlO(3) dielectric (TLAO) for metal-insulator-metal (MIM) capacitors. The resulting capacitor characteristics showed a high capacitance density of 23.2 fF/mu m(2) and a low leakage current of 7.5 x 10(-7) A/cm(2) at -1 V. Comparing to the control samples of TiLaO (ILO), TLAO dielectrics with Al(2)O(3) doping showed lower leakage current, smaller voltage nonlinearity and better time-dependent dielectric breakdown (TDDB) performance. Therefore, the TiO(2)-based dielectrics with the introduction of Al(2)O(3) might be favorable for the improved engineering of MIM capacitors. (C) 2010 Elsevier Ltd. All rights reserved.