Higher-kappa titanium dioxide incorporating LaAlO(3) as dielectrics for MIM capacitors

doi:10.1016/j.sse.2010.01.024

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Cheng, C. H.	en_US
dc.contributor.author	Hsu, H. H.	en_US
dc.contributor.author	Chen, P. C.	en_US
dc.contributor.author	Liou, B. H.	en_US
dc.contributor.author	Chin, Albert	en_US
dc.contributor.author	Yeh, F. S.	en_US
dc.date.accessioned	2014-12-08T15:06:45Z	-
dc.date.available	2014-12-08T15:06:45Z	-
dc.date.issued	2010-06-01	en_US
dc.identifier.issn	0038-1101	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.sse.2010.01.024	en_US
dc.identifier.uri	http://hdl.handle.net/11536/5304	-
dc.description.abstract	In this work, we studied a TiO(2) mixed LaAlO(3) dielectric (TLAO) for metal-insulator-metal (MIM) capacitors. The resulting capacitor characteristics showed a high capacitance density of 23.2 fF/mu m(2) and a low leakage current of 7.5 x 10(-7) A/cm(2) at -1 V. Comparing to the control samples of TiLaO (ILO), TLAO dielectrics with Al(2)O(3) doping showed lower leakage current, smaller voltage nonlinearity and better time-dependent dielectric breakdown (TDDB) performance. Therefore, the TiO(2)-based dielectrics with the introduction of Al(2)O(3) might be favorable for the improved engineering of MIM capacitors. (C) 2010 Elsevier Ltd. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.title	Higher-kappa titanium dioxide incorporating LaAlO(3) as dielectrics for MIM capacitors	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/j.sse.2010.01.024	en_US
dc.identifier.journal	SOLID-STATE ELECTRONICS	en_US
dc.citation.volume	54	en_US
dc.citation.issue	6	en_US
dc.citation.spage	646	en_US
dc.citation.epage	649	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
顯示於類別：	期刊論文