Higher-kappa titanium dioxide incorporating LaAlO3 as dielectrics for MIM capacitors

doi:10.1016/j.sse.2010.01.024

標題:	Higher-kappa titanium dioxide incorporating LaAlO3 as dielectrics for MIM capacitors
作者:	Cheng, C. H. Hsu, H. H. Chen, P. C. Liou, B. H. Chin, Albert Yeh, F. S. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	Metal-insulator-metal capacitor;LaAlO3;Al2O3
公開日期:	1-Jun-2010
摘要:	In this work, we studied a TiO2 mixed LaAlO3 dielectric (TLAO) for metal-insulator-metal (MIM) capacitors. The resulting capacitor characteristics showed a high capacitance density of 23.2 fF/mu m(2) and a low leakage current of 7.5 x 10(-7) A/cm(2) at -1 V. Comparing to the control samples of TiLaO (ILO), TLAO dielectrics with Al2O3 doping showed lower leakage current, smaller voltage nonlinearity and better time-dependent dielectric breakdown (TDDB) performance. Therefore, the TiO2-based dielectrics with the introduction of Al2O3 might be favorable for the improved engineering of MIM capacitors. (C) 2010 Elsevier Ltd. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.sse.2010.01.024 http://hdl.handle.net/11536/149953
ISSN:	0038-1101
DOI:	10.1016/j.sse.2010.01.024
期刊:	SOLID-STATE ELECTRONICS
Volume:	54
起始頁:	646
結束頁:	649
Appears in Collections:	Articles