標題: Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealing
作者: Feng, Li-Wei
Chang, Chun-Yen
Chang, Yao-Feng
Chang, Ting-Chang
Wang, Shin-Yuan
Chen, Shih-Ching
Lin, Chao-Cheng
Chen, Shih-Cheng
Chiang, Pei-Wei
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: iron alloys;iron compounds;platinum alloys;random-access storage;rapid thermal annealing;silicon compounds;titanium compounds;X-ray diffraction;X-ray photoelectron spectra
公開日期: 31-May-2010
摘要: In this paper, the influence of a 600 degrees C rapid thermal annealing for 60 s on the improvements of resistance switching behaviors in a TiN/SiO2/FeOx/FePt structure is reported. It is found that besides the distinct reduction in memory switching parameters in forming voltage, set/reset voltages, and their dispersions, the resistance ratio of high-resistance state to low-resistance state is also enlarged after annealing. The effects of annealing on improving the resistance switching properties are discussed by x-ray diffraction and x-ray photon-emission spectra depth profile results. Additionally, good retention characteristics are exhibited in the annealed TiN/SiO2/FeOx/FePt resistance switching memory. (C) 2010 American Institute of Physics. [doi:10.1063/1.3428777]
URI: http://dx.doi.org/10.1063/1.3428777
http://hdl.handle.net/11536/149962
ISSN: 0003-6951
DOI: 10.1063/1.3428777
期刊: APPLIED PHYSICS LETTERS
Volume: 96
Appears in Collections:Articles