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dc.contributor.authorLin, DSen_US
dc.contributor.authorWu, PHen_US
dc.date.accessioned2019-04-02T05:59:26Z-
dc.date.available2019-04-02T05:59:26Z-
dc.date.issued1998-02-01en_US
dc.identifier.issn0039-6028en_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0039-6028(97)00868-6en_US
dc.identifier.urihttp://hdl.handle.net/11536/150015-
dc.description.abstractWe report on the discovery of Si(100)-(2 x 1)-->(2 x n)-->c(4 x 4) structural phase transitions. Annealing the Si(100)-(2 x 1) surface between 590 and 700 degrees C for some hours causes dimer vacancies to increase and nucleate into chains, ultimately forming the (2 x n) structure. After further annealing. c(4 x 4) areas appear grow. and finally cover the entire surface. Experimental results raise the possibility not only that c(4 x 4) is a stable low-temperature structure of Si(100), but that (2 x 1) is a high-temperature phase stabilized at room temperature owing to its kinetic limitations. (C) 1998 Elsevier Science B.V.en_US
dc.language.isoen_USen_US
dc.subjectscanning tunneling microscopyen_US
dc.subjectsiliconen_US
dc.subjectsurface thermodynamicsen_US
dc.titleReal-time scanning tunneling microscopy observation of Si(100)-(2x1)->(2xn)-> c(4x4) structural phase transitionsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/S0039-6028(97)00868-6en_US
dc.identifier.journalSURFACE SCIENCEen_US
dc.citation.volume397en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000072643900002en_US
dc.citation.woscount14en_US
Appears in Collections:Articles