Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lin, DS | en_US |
dc.contributor.author | Wu, PH | en_US |
dc.date.accessioned | 2019-04-02T05:59:26Z | - |
dc.date.available | 2019-04-02T05:59:26Z | - |
dc.date.issued | 1998-02-01 | en_US |
dc.identifier.issn | 0039-6028 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/S0039-6028(97)00868-6 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/150015 | - |
dc.description.abstract | We report on the discovery of Si(100)-(2 x 1)-->(2 x n)-->c(4 x 4) structural phase transitions. Annealing the Si(100)-(2 x 1) surface between 590 and 700 degrees C for some hours causes dimer vacancies to increase and nucleate into chains, ultimately forming the (2 x n) structure. After further annealing. c(4 x 4) areas appear grow. and finally cover the entire surface. Experimental results raise the possibility not only that c(4 x 4) is a stable low-temperature structure of Si(100), but that (2 x 1) is a high-temperature phase stabilized at room temperature owing to its kinetic limitations. (C) 1998 Elsevier Science B.V. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | scanning tunneling microscopy | en_US |
dc.subject | silicon | en_US |
dc.subject | surface thermodynamics | en_US |
dc.title | Real-time scanning tunneling microscopy observation of Si(100)-(2x1)->(2xn)-> c(4x4) structural phase transitions | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/S0039-6028(97)00868-6 | en_US |
dc.identifier.journal | SURFACE SCIENCE | en_US |
dc.citation.volume | 397 | en_US |
dc.contributor.department | 物理研究所 | zh_TW |
dc.contributor.department | Institute of Physics | en_US |
dc.identifier.wosnumber | WOS:000072643900002 | en_US |
dc.citation.woscount | 14 | en_US |
Appears in Collections: | Articles |