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dc.contributor.authorWang, M. C.en_US
dc.contributor.authorTsao, S. W.en_US
dc.contributor.authorChang, T. C.en_US
dc.contributor.authorLin, Y. P.en_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorChen, J. R.en_US
dc.date.accessioned2019-04-02T05:58:16Z-
dc.date.available2019-04-02T05:58:16Z-
dc.date.issued2010-11-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.sse.2010.04.006en_US
dc.identifier.urihttp://hdl.handle.net/11536/150016-
dc.description.abstractThe photo leakage current (I(PLC)) characteristic of a-Si:H TFTs under different bending strains has been studied. The larger I(PLC) of a-Si:H TFTs under the outward bending strain is due to larger conductivity of a-Si:H, stemmed from the shift up of Fermi level (E(F)). Experimental results show the I(PLC) of a-Si:H TFTs under the outward bending strain is larger than that of flattened and inward bending a-Si:H TFTs in the density of states (DOS) limited region, stemmed from the lower recombination centers present in outward bending a-Si:H material. Furthermore, the extracted smaller activity energy (E(a)) of a-Si:H TFTs under the outward bending strain also confirmed the shift of E(F). (C) 2010 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectPhoto leakage currenten_US
dc.subjecta-Si:H TFTsen_US
dc.subjectMechanical strainen_US
dc.titleMechanical bending effect on the photo leakage currents characteristic of amorphous silicon thin film transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.sse.2010.04.006en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume54en_US
dc.citation.spage1485en_US
dc.citation.epage1487en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000281350600041en_US
dc.citation.woscount1en_US
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