完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Yao, I-Chuan | en_US |
dc.contributor.author | Lin, Pang | en_US |
dc.contributor.author | Tseng, Tseung-Yuen | en_US |
dc.date.accessioned | 2019-04-02T05:58:11Z | - |
dc.date.available | 2019-04-02T05:58:11Z | - |
dc.date.issued | 2010-12-01 | en_US |
dc.identifier.issn | 1936-6612 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1166/asl.2010.1190 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/150036 | - |
dc.description.abstract | The fabrication and electrical properties of H-2 gas sensor with ZnO-SnO2 core shell nanostructure were studied. The ZnO-SnO2 core shell nanowires were synthesized through a novel two-step chemical growth. The structure, morphology and composition of the nanowires were investigated by transmission electron microscopy (TEM), scanning electron microscopy (SEM), energy dispersive X-ray spectrometer (EDS) and X-ray photoelectron spectrometer (XPS), respectively. The experimental results showed that the amorphous SnO2 was uniformly coated onto the entire ZnO single crystal nanowire to form ZnO-SnO2 core shell nanostructure. The electrical properties of the core shell nanowires in 25-200 ppm of hydrogen (H2) were measured at temperature of 250 C. It was found that the ZnO-SnO2 core shell nanowires exhibited excellent hydrogen sensor performance, such as the sensitivity is up to 89% against 200 ppm hydrogen. Such high sensitivity was believed to be controlled by the nanoscale SnO2 layer, which was determined from pinch-off and fully conductive state. The ZnO SnO2 core shell nanostructures made by two-step chemical growth have high potential for gas sensor application. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Hydrogen Gas Sensors Using ZnO-SnO2 Core-Shell Nanostructure | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1166/asl.2010.1190 | en_US |
dc.identifier.journal | ADVANCED SCIENCE LETTERS | en_US |
dc.citation.volume | 3 | en_US |
dc.citation.spage | 548 | en_US |
dc.citation.epage | 553 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000282013500037 | en_US |
dc.citation.woscount | 24 | en_US |
顯示於類別: | 期刊論文 |