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dc.contributor.authorYao, I-Chuanen_US
dc.contributor.authorLin, Pangen_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.date.accessioned2019-04-02T05:58:11Z-
dc.date.available2019-04-02T05:58:11Z-
dc.date.issued2010-12-01en_US
dc.identifier.issn1936-6612en_US
dc.identifier.urihttp://dx.doi.org/10.1166/asl.2010.1190en_US
dc.identifier.urihttp://hdl.handle.net/11536/150036-
dc.description.abstractThe fabrication and electrical properties of H-2 gas sensor with ZnO-SnO2 core shell nanostructure were studied. The ZnO-SnO2 core shell nanowires were synthesized through a novel two-step chemical growth. The structure, morphology and composition of the nanowires were investigated by transmission electron microscopy (TEM), scanning electron microscopy (SEM), energy dispersive X-ray spectrometer (EDS) and X-ray photoelectron spectrometer (XPS), respectively. The experimental results showed that the amorphous SnO2 was uniformly coated onto the entire ZnO single crystal nanowire to form ZnO-SnO2 core shell nanostructure. The electrical properties of the core shell nanowires in 25-200 ppm of hydrogen (H2) were measured at temperature of 250 C. It was found that the ZnO-SnO2 core shell nanowires exhibited excellent hydrogen sensor performance, such as the sensitivity is up to 89% against 200 ppm hydrogen. Such high sensitivity was believed to be controlled by the nanoscale SnO2 layer, which was determined from pinch-off and fully conductive state. The ZnO SnO2 core shell nanostructures made by two-step chemical growth have high potential for gas sensor application.en_US
dc.language.isoen_USen_US
dc.titleHydrogen Gas Sensors Using ZnO-SnO2 Core-Shell Nanostructureen_US
dc.typeArticleen_US
dc.identifier.doi10.1166/asl.2010.1190en_US
dc.identifier.journalADVANCED SCIENCE LETTERSen_US
dc.citation.volume3en_US
dc.citation.spage548en_US
dc.citation.epage553en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000282013500037en_US
dc.citation.woscount24en_US
Appears in Collections:Articles