完整後設資料紀錄
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dc.contributor.authorYen, Hsi-Hsuanen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorYeh, Wen-Yungen_US
dc.date.accessioned2019-04-02T05:58:11Z-
dc.date.available2019-04-02T05:58:11Z-
dc.date.issued2010-08-01en_US
dc.identifier.issn1041-1135en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LPT.2010.2051424en_US
dc.identifier.urihttp://hdl.handle.net/11536/150038-
dc.description.abstractThis investigation describes the unique failure mechanism of the Wheatstone bridge circuit-type alternating current light-emitting diode (WB AC-LED). The micro-LEDs in WB AC-LED rectifying branches were reverse biased, and therefore, positive charges (holes) accumulated in the n-type GaN layer under the active region and combined with the GaN material and OH- ions to generate GaOx oxidation grains. The GaOx generation speed was fast with high reverse voltage applied to micro-LEDs, and the expansion of GaOx dimensions degraded the opto-electrical characteristics and eventually caused failure of the WB AC-LED. The root-mean-square reverse voltage dropped across each micro-LED from -13.1 to -6.7 V with different micro-LEDs array arrangements extended the WB AC-LED life-time from being less than 650 h to more than 1600 h, respectively.en_US
dc.language.isoen_USen_US
dc.subjectFailure analysisen_US
dc.subjectgallium compoundsen_US
dc.subjectlight-emitting diodes (LEDs)en_US
dc.subjectoxidationen_US
dc.titleParticular Failure Mechanism of GaN-Based Alternating Current Light-Emitting Diode Induced by GaOx Oxidationen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LPT.2010.2051424en_US
dc.identifier.journalIEEE PHOTONICS TECHNOLOGY LETTERSen_US
dc.citation.volume22en_US
dc.citation.spage1168en_US
dc.citation.epage1170en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000282027500008en_US
dc.citation.woscount13en_US
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