Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lo, Shun-Tsung | en_US |
dc.contributor.author | Chen, Kuang Yao | en_US |
dc.contributor.author | Lin, T. L. | en_US |
dc.contributor.author | Lin, Li-Hung | en_US |
dc.contributor.author | Luo, Dong-Sheng | en_US |
dc.contributor.author | Ochiai, Y. | en_US |
dc.contributor.author | Aoki, N. | en_US |
dc.contributor.author | Wang, Yi-Ting | en_US |
dc.contributor.author | Peng, Zai Fong | en_US |
dc.contributor.author | Lin, Yiping | en_US |
dc.contributor.author | Chen, J. C. | en_US |
dc.contributor.author | Lin, Sheng-Di | en_US |
dc.contributor.author | Huang, C. F. | en_US |
dc.contributor.author | Liang, C. -T. | en_US |
dc.date.accessioned | 2019-04-02T05:58:13Z | - |
dc.date.available | 2019-04-02T05:58:13Z | - |
dc.date.issued | 2010-10-01 | en_US |
dc.identifier.issn | 0038-1098 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.ssc.2010.07.040 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/150044 | - |
dc.description.abstract | We have performed low-temperature transport measurements on a disordered two-dimensional electron system (2DES). Features of the strong localization leading to the quantum Hall effect are observed after the 2DES undergoes a direct insulator-quantum Hall transition on increasing the perpendicular magnetic field. However, such a transition does not correspond to the onset of strong localization. The temperature dependences of the Hall resistivity and Hall conductivity reveal the importance of the electron-electron interaction effects for the observed transition in our study. (C) 2010 Elsevier Ltd. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Semiconductor | en_US |
dc.subject | Epitaxy | en_US |
dc.subject | Electron-electron interactions | en_US |
dc.subject | Quantum Hall effect | en_US |
dc.title | Probing the onset of strong localization and electron-electron interactions with the presence of a direct insulator-quantum Hall transition | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.ssc.2010.07.040 | en_US |
dc.identifier.journal | SOLID STATE COMMUNICATIONS | en_US |
dc.citation.volume | 150 | en_US |
dc.citation.spage | 1902 | en_US |
dc.citation.epage | 1905 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000282157000010 | en_US |
dc.citation.woscount | 8 | en_US |
Appears in Collections: | Articles |