Probing the onset of strong localization and electron-electron interactions with the presence of a direct insulator-quantum Hall transition

doi:10.1016/j.ssc.2010.07.040

標題:	Probing the onset of strong localization and electron-electron interactions with the presence of a direct insulator-quantum Hall transition
作者:	Lo, Shun-Tsung Chen, Kuang Yao Lin, T. L. Lin, Li-Hung Luo, Dong-Sheng Ochiai, Y. Aoki, N. Wang, Yi-Ting Peng, Zai Fong Lin, Yiping Chen, J. C. Lin, Sheng-Di Huang, C. F. Liang, C. -T. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	Semiconductor;Epitaxy;Electron-electron interactions;Quantum Hall effect
公開日期:	1-十月-2010
摘要:	We have performed low-temperature transport measurements on a disordered two-dimensional electron system (2DES). Features of the strong localization leading to the quantum Hall effect are observed after the 2DES undergoes a direct insulator-quantum Hall transition on increasing the perpendicular magnetic field. However, such a transition does not correspond to the onset of strong localization. The temperature dependences of the Hall resistivity and Hall conductivity reveal the importance of the electron-electron interaction effects for the observed transition in our study. (C) 2010 Elsevier Ltd. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.ssc.2010.07.040 http://hdl.handle.net/11536/150044
ISSN:	0038-1098
DOI:	10.1016/j.ssc.2010.07.040
期刊:	SOLID STATE COMMUNICATIONS
Volume:	150
起始頁:	1902
結束頁:	1905
顯示於類別：	期刊論文