Effect of Ni residues on the performance and the uniformity of nickel-induced lateral crystallization polycrystalline silicon nanowire thin-film transistors

doi:10.1016/j.matchemphys.2010.08.018

Full metadata record

DC Field	Value	Language
dc.contributor.author	Wang, Bau-Ming	en_US
dc.contributor.author	Yang, Tzu-Ming	en_US
dc.contributor.author	Wu, YewChung Sermon	en_US
dc.contributor.author	Su, Chun-Jung	en_US
dc.contributor.author	Lin, Horng-Chih	en_US
dc.date.accessioned	2019-04-02T06:00:15Z	-
dc.date.available	2019-04-02T06:00:15Z	-
dc.date.issued	2010-11-01	en_US
dc.identifier.issn	0254-0584	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.matchemphys.2010.08.018	en_US
dc.identifier.uri	http://hdl.handle.net/11536/150061	-
dc.description.abstract	High performance nickel-induced lateral crystallization (NILC) polycrystalline silicon (poly-Si) nanowire (NW) thin-film transistors (TFTs) were fabricated. The phosphorous-doped amorphous silicon (alpha-Si)/chem-SiO(2) films were employed as Ni-gettering layers to investigate effect of Ni residues on the performance and the uniformity of NILC poly-Si NW TFTs. It was found that the performance and the uniformity of NW TFTs were greatly improved after Ni-gettering process. (C) 2010 Elsevier B.V. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	Nickel-metal induced lateral crystallization (NILC)	en_US
dc.subject	Nanowire (NW)	en_US
dc.subject	Ni-gettering	en_US
dc.subject	Thin-film transistor (TFT)	en_US
dc.title	Effect of Ni residues on the performance and the uniformity of nickel-induced lateral crystallization polycrystalline silicon nanowire thin-film transistors	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/j.matchemphys.2010.08.018	en_US
dc.identifier.journal	MATERIALS CHEMISTRY AND PHYSICS	en_US
dc.citation.volume	124	en_US
dc.citation.spage	880	en_US
dc.citation.epage	883	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000282607900156	en_US
dc.citation.woscount	2	en_US
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