Effect of Ni residues on the performance and the uniformity of nickel-induced lateral crystallization polycrystalline silicon nanowire thin-film transistors

doi:10.1016/j.matchemphys.2010.08.018

標題:	Effect of Ni residues on the performance and the uniformity of nickel-induced lateral crystallization polycrystalline silicon nanowire thin-film transistors
作者:	Wang, Bau-Ming Yang, Tzu-Ming Wu, YewChung Sermon Su, Chun-Jung Lin, Horng-Chih 材料科學與工程學系電子工程學系及電子研究所 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics
關鍵字:	Nickel-metal induced lateral crystallization (NILC);Nanowire (NW);Ni-gettering;Thin-film transistor (TFT)
公開日期:	1-Nov-2010
摘要:	High performance nickel-induced lateral crystallization (NILC) polycrystalline silicon (poly-Si) nanowire (NW) thin-film transistors (TFTs) were fabricated. The phosphorous-doped amorphous silicon (alpha-Si)/chem-SiO(2) films were employed as Ni-gettering layers to investigate effect of Ni residues on the performance and the uniformity of NILC poly-Si NW TFTs. It was found that the performance and the uniformity of NW TFTs were greatly improved after Ni-gettering process. (C) 2010 Elsevier B.V. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.matchemphys.2010.08.018 http://hdl.handle.net/11536/150061
ISSN:	0254-0584
DOI:	10.1016/j.matchemphys.2010.08.018
期刊:	MATERIALS CHEMISTRY AND PHYSICS
Volume:	124
起始頁:	880
結束頁:	883
Appears in Collections:	Articles