標題: Ni silicide formation on epitaxial Si1-yCy/(001) layers
作者: Lee, S. W.
Huang, S. H.
Cheng, S. L.
Chen, P. S.
Wu, W. W.
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Silicide;Sheet resistance;Thermal stability
公開日期: 1-Oct-2010
摘要: The formation of Ni silicides on Si1 - yCy (y=0.01 and 0.018) epilayers grown on Si(001) has been investigated. The presence of C atoms was found to significantly retard the growth kinetics of NiSi and enhances the thermal stability of thin NiSi films. For Ni(11 nm)/Si0.982C0.018 samples, the process window of NiSi was shifted and extended to 450-700 degrees C. Moreover, there was an additional strain introduced into the Si1 - yCy epilayers during Ni silicidation. This work shows the potential of Ni silicidation on Si1yCy for device applications. (C) 2010 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2010.05.015
http://hdl.handle.net/11536/150080
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2010.05.015
期刊: THIN SOLID FILMS
Volume: 518
起始頁: 7394
結束頁: 7397
Appears in Collections:Articles