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dc.contributor.authorLee, S. W.en_US
dc.contributor.authorHuang, S. H.en_US
dc.contributor.authorCheng, S. L.en_US
dc.contributor.authorChen, P. S.en_US
dc.contributor.authorWu, W. W.en_US
dc.date.accessioned2019-04-02T06:00:19Z-
dc.date.available2019-04-02T06:00:19Z-
dc.date.issued2010-10-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2010.05.015en_US
dc.identifier.urihttp://hdl.handle.net/11536/150080-
dc.description.abstractThe formation of Ni silicides on Si1 - yCy (y=0.01 and 0.018) epilayers grown on Si(001) has been investigated. The presence of C atoms was found to significantly retard the growth kinetics of NiSi and enhances the thermal stability of thin NiSi films. For Ni(11 nm)/Si0.982C0.018 samples, the process window of NiSi was shifted and extended to 450-700 degrees C. Moreover, there was an additional strain introduced into the Si1 - yCy epilayers during Ni silicidation. This work shows the potential of Ni silicidation on Si1yCy for device applications. (C) 2010 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectSilicideen_US
dc.subjectSheet resistanceen_US
dc.subjectThermal stabilityen_US
dc.titleNi silicide formation on epitaxial Si1-yCy/(001) layersen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.tsf.2010.05.015en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume518en_US
dc.citation.spage7394en_US
dc.citation.epage7397en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000282915100050en_US
dc.citation.woscount11en_US
Appears in Collections:Articles


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