標題: Novel Metamorphic HEMTs With Highly Doped InGaAs Source/Drain Regions for High Frequency Applications
作者: Sahoo, Kartika Chandra
Kuo, Chien-I
Li, Yiming
Chang, Edward Yi
材料科學與工程學系
電子工程學系及電子研究所
電信工程研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
Institute of Communications Engineering
關鍵字: Device simulation;DC and ac characteristics;HEMT;InGaAs;strained channel
公開日期: 1-Oct-2010
摘要: In this paper, we report the first result of a strained In(0.52)Ga(0.48) As channel high-electron mobility transistor (HEMT) featuring highly doped In(0.4)Ga(0.6) As source/drain (S/D) regions. A lattice mismatch of 0.9% between In(0.52)Ga(0.48) As and In(0.4)Ga(0.6) As S/D has resulted in a lateral strain in the In(0.52)Ga(0.48) As channel region, where the series resistance is reduced with highly doped S/D regions. An experimentally validated device simulation is advanced for the proposed HEMT, and the results of this paper have shown that there are 60% drive-current and 100% transconductance improvements, compared with the conventional structure. A remarkable 150-GHz increase in the cutoff frequency has been seen for the proposed structure over the conventional one as well for the shown devices.
URI: http://dx.doi.org/10.1109/TED.2010.2062521
http://hdl.handle.net/11536/150098
ISSN: 0018-9383
DOI: 10.1109/TED.2010.2062521
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 57
起始頁: 2594
結束頁: 2598
Appears in Collections:Articles