Title: | Effects of Vanadium Doping on Resistive Switching Characteristics and Mechanisms of SrZrO3-Based Memory Films |
Authors: | Lin, Meng-Han Wu, Ming-Chi Lin, Chen-Hsi Tseng, Tseung-Yuen 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
Keywords: | Oxygen vacancies;resistive random access memory (RRAM);resistive switching (RS) mechanism;SrZrO3 (SZO);vanadium doping |
Issue Date: | 1-Aug-2010 |
Abstract: | The effects of vanadium doping on resistive switching (RS) characteristics and mechanisms of RF-sputtered SrZrO3 (SZO)-based thin films are investigated in this paper. The physical and electrical properties of SZO-based thin films are modulated by vanadium doping due to the Zr4+ ion replaced by V5+, further affecting the RS parameters of SZO-based thin films. The conduction mechanisms of SZO-based thin films are dominated by ohmic conduction (hoping conduction) and Frenkel-Poole emission for the low resistance state (LRS) and the high resistance state (HRS), respectively. The turn-on process might be attributed to the formation of conducting filaments consisting of oxygen vacancies with the effective barrier height (phi(B,eff)) in the range of 0.10-0.13 eV, whereas the turn-off process might result from thermally assisted oxidation of oxygen vacancies by the Joule heating effect. Furthermore, the introduction of the high valence cation (V5+) in a Zr4+ site of SZO crystalline structure can suppress the formation of oxygen vacancies due to the charge neutrality restriction. Such suppression leads to the changes in the forming voltage, turn-on voltage, HRS resistance, dielectric constant, and phi(B,eff) with vanadium doping concentration up to 0.2 mol%, which is within the solid solubility limit based on our measured lattice constants and Vegard's law. |
URI: | http://dx.doi.org/10.1109/TED.2010.2050837 http://hdl.handle.net/11536/150105 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2010.2050837 |
Journal: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 57 |
Begin Page: | 1801 |
End Page: | 1808 |
Appears in Collections: | Articles |