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dc.contributor.authorLin, Pei-Hsuanen_US
dc.contributor.authorChen, Cheng-Pinen_US
dc.contributor.authorHung, Yen-Jenen_US
dc.contributor.authorHsu, Shao-Sunen_US
dc.contributor.authorChen, Liang-Yien_US
dc.contributor.authorCheng, Yun-Weien_US
dc.contributor.authorKe, Min-Yungen_US
dc.contributor.authorChiu, Ching Huaen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorHuang, Jian Jangen_US
dc.date.accessioned2019-04-02T06:00:28Z-
dc.date.available2019-04-02T06:00:28Z-
dc.date.issued2010-11-01en_US
dc.identifier.issn1041-1135en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LPT.2010.2069557en_US
dc.identifier.urihttp://hdl.handle.net/11536/150108-
dc.description.abstractWe investigated the carrier transient response of the nanopatterned silicon heterojunction photodiodes using ZnO as the n-type semiconductor. The results show that under the constant light illumination intensity, the planar structure has faster carrier response than the nanopatterned amorphous silicon (intrinsic) (a-Si(i)) diodes. It is attributed to a higher number of generated carriers in the nanostructure (due to the lower surface reflectivity) that increases the probability of collisions. On the other hand, the shortest response time of the device with nanopatterned p(+)-Si suggests that carriers can be effectively transported vertically and horizontally through the p-i(intrinsic)-n structure. Furthermore, the wavelength-dependent rise time is correlated to the different transport distance between electrons and holes at different excited wavelengths.en_US
dc.language.isoen_USen_US
dc.subjectHeterojunction photodiodesen_US
dc.subjectnatural lithographyen_US
dc.subjectsolar cellsen_US
dc.subjecttransient responseen_US
dc.titleInvestigation of Carrier Transient Response of Nanopatterned n-ZnO/a-Si(i)/p(+)-Si Photodiodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LPT.2010.2069557en_US
dc.identifier.journalIEEE PHOTONICS TECHNOLOGY LETTERSen_US
dc.citation.volume22en_US
dc.citation.spage1589en_US
dc.citation.epage1591en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000283442700001en_US
dc.citation.woscount0en_US
Appears in Collections:Articles