標題: The investigation of charge loss mechanism in a two-bit wrapped-gate nitride storage nonvolatile memory
作者: Ho, Y. H.
Chung, Steve S.
Chen, H. H.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-十一月-2010
摘要: The charge loss mechanism of a two-bit wrapped-gate nitride storage nonvolatile memory is investigated. From retention measurements, it was shown that both vertical and lateral charge loss coexist. As a result of the misalignment of carriers, the lateral charge loss was caused by the hole accumulation near the junction and migrating toward the channel. By using a scaling of the word-gate length or a substrate-transient hot hole erase scheme, the charge loss in the lateral direction can be suppressed. Also, from the retention test, the latter scheme, substrate-transient hot hole (STHH), has a window independent of the word-gate length, which is better for the device scaling. (C) 2010 American Institute of Physics. [doi:10.1063/1.3508956]
URI: http://dx.doi.org/10.1063/1.3508956
http://hdl.handle.net/11536/150135
ISSN: 0003-6951
DOI: 10.1063/1.3508956
期刊: APPLIED PHYSICS LETTERS
Volume: 97
顯示於類別:期刊論文