Light-Output-Power Enhancement of GaN-Based Light-Emitting Diodes on an n-GaN Layer Using a SiO2 Photonic Quasi-Crystal Overgrowth

doi:10.1109/LED.2010.2045218

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Huang, H. W.	en_US
dc.contributor.author	Huang, J. K.	en_US
dc.contributor.author	Lee, K. Y.	en_US
dc.contributor.author	Lin, C. F.	en_US
dc.contributor.author	Kuo, H. C.	en_US
dc.date.accessioned	2019-04-02T06:00:20Z	-
dc.date.available	2019-04-02T06:00:20Z	-
dc.date.issued	2010-06-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2010.2045218	en_US
dc.identifier.uri	http://hdl.handle.net/11536/150151	-
dc.description.abstract	GaN-based LEDs with a SiO2 oxide PQC pattern on an n-GaN layer by nanoimprint lithography are fabricated and investigated. At a driving current of 20 mA on a Transistor-Outline-can package, the light output power of LED III (d = 1.2 mu m) was enhanced by a factor of 1.20. The internal-quantum-efficiency result offers promising potential to enhance the light output power of commercial light-emitting devices with a SiO2 oxide PQC structure on an n-GaN layer.	en_US
dc.language.iso	en_US	en_US
dc.subject	Gallium nitride (GaN)	en_US
dc.subject	light-emitting diodes (LEDs)	en_US
dc.subject	photonic quasi-crystal (PQC)	en_US
dc.title	Light-Output-Power Enhancement of GaN-Based Light-Emitting Diodes on an n-GaN Layer Using a SiO2 Photonic Quasi-Crystal Overgrowth	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2010.2045218	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	31	en_US
dc.citation.spage	573	en_US
dc.citation.epage	575	en_US
dc.contributor.department	光電工程研究所	zh_TW
dc.contributor.department	Institute of EO Enginerring	en_US
dc.identifier.wosnumber	WOS:000284097800009	en_US
dc.citation.woscount	4	en_US
顯示於類別：	期刊論文