完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chang, W. H. | en_US |
dc.contributor.author | Chang, P. | en_US |
dc.contributor.author | Lai, T. Y. | en_US |
dc.contributor.author | Lee, Y. J. | en_US |
dc.contributor.author | Kwo, J. | en_US |
dc.contributor.author | Hsu, C-H | en_US |
dc.contributor.author | Hong, M. | en_US |
dc.date.accessioned | 2019-04-02T05:59:42Z | - |
dc.date.available | 2019-04-02T05:59:42Z | - |
dc.date.issued | 2010-12-01 | en_US |
dc.identifier.issn | 1528-7483 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1021/cg100851b | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/150181 | - |
dc.description.abstract | High-quality Gd2O3 epi-films 5-20 nm thick have been grown on GaN (0001) using molecular beam epitaxy A detailed structural investigation was carried out by in situ reflection high energy electron diffraction cross sectional transmission electron microscopy, and X-ray scattering using a synchrotron radiation source The films consist of the high temperature monoclinic (m) phase with six rotational domains which can be easily mistaken for being the hexagonal phase All the domains follow the m-Gd2O3 ((2) over bar 01)< 020 > parallel to GaN (0001) < 11<(2)over bar>0 > orientational relationship | en_US |
dc.language.iso | en_US | en_US |
dc.title | Structural Characteristics of Nanometer Thick Gd2O3 Films Grown on GaN (0001) | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1021/cg100851b | en_US |
dc.identifier.journal | CRYSTAL GROWTH & DESIGN | en_US |
dc.citation.volume | 10 | en_US |
dc.citation.spage | 5117 | en_US |
dc.citation.epage | 5122 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000284675100015 | en_US |
dc.citation.woscount | 9 | en_US |
顯示於類別: | 期刊論文 |