完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChang, W. H.en_US
dc.contributor.authorChang, P.en_US
dc.contributor.authorLai, T. Y.en_US
dc.contributor.authorLee, Y. J.en_US
dc.contributor.authorKwo, J.en_US
dc.contributor.authorHsu, C-Hen_US
dc.contributor.authorHong, M.en_US
dc.date.accessioned2019-04-02T05:59:42Z-
dc.date.available2019-04-02T05:59:42Z-
dc.date.issued2010-12-01en_US
dc.identifier.issn1528-7483en_US
dc.identifier.urihttp://dx.doi.org/10.1021/cg100851ben_US
dc.identifier.urihttp://hdl.handle.net/11536/150181-
dc.description.abstractHigh-quality Gd2O3 epi-films 5-20 nm thick have been grown on GaN (0001) using molecular beam epitaxy A detailed structural investigation was carried out by in situ reflection high energy electron diffraction cross sectional transmission electron microscopy, and X-ray scattering using a synchrotron radiation source The films consist of the high temperature monoclinic (m) phase with six rotational domains which can be easily mistaken for being the hexagonal phase All the domains follow the m-Gd2O3 ((2) over bar 01)< 020 > parallel to GaN (0001) < 11<(2)over bar>0 > orientational relationshipen_US
dc.language.isoen_USen_US
dc.titleStructural Characteristics of Nanometer Thick Gd2O3 Films Grown on GaN (0001)en_US
dc.typeArticleen_US
dc.identifier.doi10.1021/cg100851ben_US
dc.identifier.journalCRYSTAL GROWTH & DESIGNen_US
dc.citation.volume10en_US
dc.citation.spage5117en_US
dc.citation.epage5122en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000284675100015en_US
dc.citation.woscount9en_US
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