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dc.contributor.authorYu, Ming-Jiueen_US
dc.contributor.authorYeh, Yung-Huien_US
dc.contributor.authorCheng, Chun-Chengen_US
dc.contributor.authorLin, Chang-Yuen_US
dc.contributor.authorHo, Geng-Taien_US
dc.contributor.authorLai, Benjamin Chih-Mingen_US
dc.contributor.authorLeu, Chyi-Mingen_US
dc.contributor.authorHou, Tuo-Hungen_US
dc.contributor.authorChan, Yi-Jenen_US
dc.date.accessioned2014-12-08T15:21:10Z-
dc.date.available2014-12-08T15:21:10Z-
dc.date.issued2012-01-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2011.2170809en_US
dc.identifier.urihttp://hdl.handle.net/11536/15020-
dc.description.abstractHigh-performance amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) are successfully fabricated on a colorless polyimide substrate using a top-gate self-aligned structure. All thin films are deposited by roll-to-roll-compatible sputtering processes at room temperature. The maximum field-effect mobility is 18 cm(2)/V . s, the threshold voltage is - 1.35 V, the subthreshold slope is 0.1 V/decade, and the on/off current ratio is about 10(5). The results highlight that excellent device performance can be realized in a-IGZO TFTs without compromising manufacturability.en_US
dc.language.isoen_USen_US
dc.subjectAmorphous InGaZnOen_US
dc.subjectroll-to-rollen_US
dc.subjectthin-film transistor (TFT)en_US
dc.titleAmorphous InGaZnO Thin-Film Transistors Compatible With Roll-to-Roll Fabrication at Room Temperatureen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2011.2170809en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume33en_US
dc.citation.issue1en_US
dc.citation.spage47en_US
dc.citation.epage49en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000298380300015-
dc.citation.woscount11-
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