Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yu, Ming-Jiue | en_US |
dc.contributor.author | Yeh, Yung-Hui | en_US |
dc.contributor.author | Cheng, Chun-Cheng | en_US |
dc.contributor.author | Lin, Chang-Yu | en_US |
dc.contributor.author | Ho, Geng-Tai | en_US |
dc.contributor.author | Lai, Benjamin Chih-Ming | en_US |
dc.contributor.author | Leu, Chyi-Ming | en_US |
dc.contributor.author | Hou, Tuo-Hung | en_US |
dc.contributor.author | Chan, Yi-Jen | en_US |
dc.date.accessioned | 2014-12-08T15:21:10Z | - |
dc.date.available | 2014-12-08T15:21:10Z | - |
dc.date.issued | 2012-01-01 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/LED.2011.2170809 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/15020 | - |
dc.description.abstract | High-performance amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) are successfully fabricated on a colorless polyimide substrate using a top-gate self-aligned structure. All thin films are deposited by roll-to-roll-compatible sputtering processes at room temperature. The maximum field-effect mobility is 18 cm(2)/V . s, the threshold voltage is - 1.35 V, the subthreshold slope is 0.1 V/decade, and the on/off current ratio is about 10(5). The results highlight that excellent device performance can be realized in a-IGZO TFTs without compromising manufacturability. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Amorphous InGaZnO | en_US |
dc.subject | roll-to-roll | en_US |
dc.subject | thin-film transistor (TFT) | en_US |
dc.title | Amorphous InGaZnO Thin-Film Transistors Compatible With Roll-to-Roll Fabrication at Room Temperature | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/LED.2011.2170809 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 33 | en_US |
dc.citation.issue | 1 | en_US |
dc.citation.spage | 47 | en_US |
dc.citation.epage | 49 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000298380300015 | - |
dc.citation.woscount | 11 | - |
Appears in Collections: | Articles |
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