Amorphous InGaZnO Thin-Film Transistors Compatible With Roll-to-Roll Fabrication at Room Temperature

Abstract

High-performance amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) are successfully fabricated on a colorless polyimide substrate using a top-gate self-aligned structure. All thin films are deposited by roll-to-roll-compatible sputtering processes at room temperature. The maximum field-effect mobility is 18 cm(2)/V . s, the threshold voltage is - 1.35 V, the subthreshold slope is 0.1 V/decade, and the on/off current ratio is about 10(5). The results highlight that excellent device performance can be realized in a-IGZO TFTs without compromising manufacturability.