One-dimensional germanium nanostructures-formation and their electron field emission properties

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Wu, Hung-Chi	en_US
dc.contributor.author	Hou, Te-Chien	en_US
dc.contributor.author	Chueh, Yu-Lun	en_US
dc.contributor.author	Chen, Lih-Juann	en_US
dc.contributor.author	Chiu, Hsin-Tien	en_US
dc.contributor.author	Lee, Chi-Young	en_US
dc.date.accessioned	2019-04-02T05:59:41Z	-
dc.date.available	2019-04-02T05:59:41Z	-
dc.date.issued	2010-11-12	en_US
dc.identifier.issn	0957-4484	en_US
dc.identifier.uri	http://dx.doi.org/10.1088/0957-4484/21/45/455601	en_US
dc.identifier.uri	http://hdl.handle.net/11536/150211	-
dc.description.abstract	Ge nanostructures were synthesized by reduction of GeO(2) in H(2) atmosphere at various temperatures. Entangled and straight Ge nanowires with oxide shells were grown at high temperatures. Ge nanowires with various numbers of nodules were obtained at low temperatures. Ge nanowires without nodules exhibited remarkable field emission properties with a turn-on field of 4.6 V mu m(-1) and field enhancement factor of 1242.	en_US
dc.language.iso	en_US	en_US
dc.title	One-dimensional germanium nanostructures-formation and their electron field emission properties	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1088/0957-4484/21/45/455601	en_US
dc.identifier.journal	NANOTECHNOLOGY	en_US
dc.citation.volume	21	en_US
dc.contributor.department	應用化學系	zh_TW
dc.contributor.department	Department of Applied Chemistry	en_US
dc.identifier.wosnumber	WOS:000285548400010	en_US
dc.citation.woscount	10	en_US
顯示於類別：	期刊論文