標題: One-Dimensional ZnO Nanostructures
作者: Jayadevan, K. P.
Tseng, T. Y.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: ZnO;Semiconductor;Band Gap;Binding Energy;Excitons;Anisotropy;Single Crystal;Nucleation;Growth;Clusters;Alloy;Catalyst;Supersaturation;Dendrites;Vapor-Liquid-Solid (VLS);Vapor-Solid (VS);Oxide-Assisted Growth;Carbothermal Reaction;Template;Solution-Liquid-Solid (SLS);Solvothermal Process;Hydrothermal Process;Oriented Attachment;Self-Assembly;Nanostructures;Heterostructure;Quantumwires/Rod;Nanorod;Nanowire;Nanobelt;Nanotube;Aspect Ratio;Thermal Budget;Processing-Microstructure-Property;Quantum Confinement;Dopants;Temperature;Pressure;Time;Atmosphere;Substrate;Orientation;Growth Rate;Number Density;Morphology;Photoluminescence;Field Emission;Ultra-Violet (UV) Lasers;Field-Effect Transistors;Sensors;Electromechanical Devices
公開日期: 1-六月-2012
摘要: The wide-gap semiconductor ZnO with nanostructures such as nanoparticle, nanorod, nanowire, nanobelt, nanotube has high potential for a variety of applications. This article reviews the fundamentals of one-dimensional ZnO nanostructures, including processing, structure, property, application and their processing-microstructure-property correlation. Various fabrication methods of the ZnO nanostructures including vapor-liquid-solid process, vapor-solid growth, solution growth, solvothermal growth, template-assisted growth and self-assembly are introduced. The characterization and properties of the ZnO nanostructures are described. The possible applications of these nanostructures are also discussed.
URI: http://dx.doi.org/10.1166/jnn.2012.6486
http://hdl.handle.net/11536/16960
ISSN: 1533-4880
DOI: 10.1166/jnn.2012.6486
期刊: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume: 12
Issue: 6
起始頁: 4409
結束頁: 4457
顯示於類別:期刊論文