標題: Stacked GeO/SrTiOx Resistive Memory with Ultralow Resistance Currents
作者: Cheng, C. H.
Chin, Albert
Yeh, F. S.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 31-Jan-2011
摘要: We report a high performance and low-power operated resistive memory. Using stacked covalent-bond-dielectric GeOx on metal-oxide SrTiOx to form the cost-effective Ni/GeOx/SrTiOx/TaN resistive random access memory, ultralow set power of small 1 mu W (0.9 mu A at 1.2 V), reset power of 13 pW (0.13 nA at 0.1 V), fast 50 ns switching time and good 10(6) cycling endurance are realized. (C) 2011 American Institute of Physics. [doi:10.1063/1.3549689]
URI: http://dx.doi.org/10.1063/1.3549689
http://hdl.handle.net/11536/150240
ISSN: 0003-6951
DOI: 10.1063/1.3549689
期刊: APPLIED PHYSICS LETTERS
Volume: 98
Appears in Collections:Articles