標題: | High-Performance Poly-Si Nanowire Thin-Film Transistors Using the HfO2 Gate Dielectric |
作者: | Lee, Chen-Ming Tsui, Bing-Yue 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | High-dielectric-constant dielectric;nanowire (NW);polycrystalline silicon (poly-Si);thin-film transistor (TFT) |
公開日期: | 1-三月-2011 |
摘要: | High-performance polycrystalline-silicon (poly-Si) nanowire (NW) thin-film transistors (TFTs) using hafnium dioxide (HfO2) as gate dielectric is successfully fabricated for the first time. The excellent short-channel characteristics are attributed to the high-kappa gate dielectric, ultrathin poly-SiNW channel thickness, and omega-shaped gate structure. The record high driving capability of 549 mu A/mu m results from the ultrashort gate length (L-G), thin equivalent oxide thickness, and Ni silicide metal source/drain. This letter reveals the opportunity of high-performance poly-Si TFT circuits for system-on-panel and 3-D integrated circuit (3-D IC) applications. |
URI: | http://dx.doi.org/10.1109/LED.2010.2095493 http://hdl.handle.net/11536/150251 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2010.2095493 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 32 |
起始頁: | 327 |
結束頁: | 329 |
顯示於類別: | 期刊論文 |