標題: High-Performance Poly-Si Nanowire Thin-Film Transistors Using the HfO2 Gate Dielectric
作者: Lee, Chen-Ming
Tsui, Bing-Yue
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: High-dielectric-constant dielectric;nanowire (NW);polycrystalline silicon (poly-Si);thin-film transistor (TFT)
公開日期: 1-三月-2011
摘要: High-performance polycrystalline-silicon (poly-Si) nanowire (NW) thin-film transistors (TFTs) using hafnium dioxide (HfO2) as gate dielectric is successfully fabricated for the first time. The excellent short-channel characteristics are attributed to the high-kappa gate dielectric, ultrathin poly-SiNW channel thickness, and omega-shaped gate structure. The record high driving capability of 549 mu A/mu m results from the ultrashort gate length (L-G), thin equivalent oxide thickness, and Ni silicide metal source/drain. This letter reveals the opportunity of high-performance poly-Si TFT circuits for system-on-panel and 3-D integrated circuit (3-D IC) applications.
URI: http://dx.doi.org/10.1109/LED.2010.2095493
http://hdl.handle.net/11536/150251
ISSN: 0741-3106
DOI: 10.1109/LED.2010.2095493
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 32
起始頁: 327
結束頁: 329
顯示於類別:期刊論文