CMOS Fully Compatible Embedded Non-Volatile Memory System With TiO2-SiO2 Hybrid Resistive-Switching Material

Abstract

We demonstrate a non-volatile CMOS fully compatible embedded memory cell with a hybrid resistive switching material, TiO2-SiO2, in a 0.18 mu m node CMOS process. Both voltage-and temperature-dependent transports indicate that a Schottky-type resistance switching model dominates the TiO2 based transition-metal-oxide resistive random access memory (TMO-RRAM) system. Data retention is improved by inserting a very thin SiO2 layer between the bottom electrode and TiO2 film to enhance the Schottky barrier height, while maintaining TiO2 based RRAM characteristics.