標題: H2S molecular beam passivation of Ge(001)
作者: Merckling, C.
Chang, Y. C.
Lu, C. Y.
Penaud, J.
El-Kazzi, M.
Bellenger, F.
Brammertz, G.
Hong, M.
Kwo, J.
Meuris, M.
Dekoster, J.
Heyns, M. M.
Caymax, M.
交大名義發表
National Chiao Tung University
關鍵字: Passivation;H2S;Molecular beam epitaxy;High-mu semiconductors
公開日期: 1-四月-2011
摘要: A fundamental issue regarding the introduction of high-mobility Ge channels in CMOS circuits is the electrical passivation of the interface with the high-k gate dielectric. In this paper, we investigate the passivation of p-Ge(0 0 1) using molecular H2S. The modification of the semiconductor surface is monitored in situ by RHEED and the interface is characterized by XPS analyses. MOS capacitors are fabricated to extract interface state density, and finally we demonstrate the efficiency of the passivation scheme using a combination with an ultra thin Al interlayer. (C) 2010 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.mee.2010.09.012
http://hdl.handle.net/11536/150262
ISSN: 0167-9317
DOI: 10.1016/j.mee.2010.09.012
期刊: MICROELECTRONIC ENGINEERING
Volume: 88
起始頁: 399
結束頁: 402
顯示於類別:期刊論文