完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chou, Y. L. | en_US |
dc.contributor.author | Chung, Y. T. | en_US |
dc.contributor.author | Wang, Tahui | en_US |
dc.contributor.author | Ku, S. H. | en_US |
dc.contributor.author | Zou, N. K. | en_US |
dc.contributor.author | Chen, Vincent | en_US |
dc.contributor.author | Lu, W. P. | en_US |
dc.contributor.author | Chen, K. C. | en_US |
dc.contributor.author | Lu, Chih-Yuan | en_US |
dc.date.accessioned | 2019-04-02T05:59:51Z | - |
dc.date.available | 2019-04-02T05:59:51Z | - |
dc.date.issued | 2011-04-01 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/LED.2011.2109031 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/150263 | - |
dc.description.abstract | Discrete nitride program charge loss in a small-area SONOS Flash memory cell during retention is observed. Our measurement shows that a retention V-t of a programmed SONOS cell exhibits a stepwise evolution with retention time. Individual single-program charge-loss-induced threshold voltage shifts (Delta V-t) are characterized. We find the following: 1) The magnitude of Delta V-t exhibits an exponential distribution, which is believed due to a current-path percolation effect caused by random program charges and substrate dopants, and 2) program-state V-t retention loss has large variations in different cells and P/E cycles due to the percolation effect. We develop a Monte Carlo analysis to take into account the distribution of Delta V-t and a tunneling front model to study the spread of a retention V-t distribution in a SONOS Flash memory. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Percolation | en_US |
dc.subject | retention loss | en_US |
dc.subject | single-program charge | en_US |
dc.subject | SONOS | en_US |
dc.title | Variations of V-t Retention Loss in a SONOS Flash Memory Due to a Current-Path Percolation Effect | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/LED.2011.2109031 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 32 | en_US |
dc.citation.spage | 458 | en_US |
dc.citation.epage | 460 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000288664800010 | en_US |
dc.citation.woscount | 1 | en_US |
顯示於類別: | 期刊論文 |