完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChang, W. H.en_US
dc.contributor.authorChang, P.en_US
dc.contributor.authorLee, W. C.en_US
dc.contributor.authorLai, T. Y.en_US
dc.contributor.authorKwo, J.en_US
dc.contributor.authorHsu, C. -H.en_US
dc.contributor.authorHong, J. M.en_US
dc.contributor.authorHong, M.en_US
dc.date.accessioned2019-04-02T05:58:53Z-
dc.date.available2019-04-02T05:58:53Z-
dc.date.issued2011-05-15en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jcrysgro.2010.10.006en_US
dc.identifier.urihttp://hdl.handle.net/11536/150332-
dc.description.abstractNanometer-thick Y2O3 films were grown epitaxially on GaN (0 0 0 1) using molecular beam epitaxy (MBE). The structures of the oxide films were studied in situ by reflection high energy electron diffraction (RHEED) during the growth and ex situ by high resolution X-ray diffraction using synchrotron radiation. At atmospheric pressure. Y2O3 exists in either cubic or hexagonal structure. For the first time, the high-pressure monoclinic phase of Y2O3, stabilized by epitaxy, was prepared and preserved under atmospheric pressure. The electrical characterization carried out on the Y2O3/GaN metal-oxide-semiconductor (MOS) capacitors showed a leakage current density of similar to 3.3 x 10(-6) A/cm(2) at 1.5 MV/cm, which remained almost the same after 800 degrees C annealing. A dielectric constant of similar to 20 and a hysteresis of similar to 250 mV were deduced from the capacitance-voltage (C-V) curves for the epitaxial monoclinic Y2O3. (C) 2010 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectMonoclinicen_US
dc.subjectSingle crystal growthen_US
dc.subjectMolecular beam epitaxyen_US
dc.subjectY2O3en_US
dc.subjectGaNen_US
dc.subjectHigh-kappa dielectricsen_US
dc.titleEpitaxial stabilization of a monoclinic phase in Y2O3 films on c-plane GaNen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jcrysgro.2010.10.006en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.citation.volume323en_US
dc.citation.spage107en_US
dc.citation.epage110en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000292175000028en_US
dc.citation.woscount17en_US
顯示於類別:期刊論文